高纯钨溅射靶材制取工艺研究  

STUDY ON PREPARATION OF HIGH PURE TUNGSTEN MATERIALS

作　　者：郭让民[1] 

机构地区：[1]西北有色金属研究院

出　　处：《中国钼业》1997年第A00期39-41,共3页China Molybdenum Industry

摘　　要：微电子技术、光电技术对钨的纯度要求越来越高，熔炼钨纯度高但尺寸规格小且加工难度大。仅对采用粉末冶金法制取高纯钨材工艺试验过程中，重新氨溶，中和结晶的除杂效应进行了一些探讨，对经高真空高温处理后的钨方坯加工性能进行了加工试验，证明采用重新氨溶、中和结晶、超高真空高温脱气工艺可有效地去除杂质。高纯钨材质优良、性能稳定、放气量小。It required high pure tungsten with development of microelectronic and photoelectri city technology.The purity of smelting tungsten was high,but its size was small.It was tested for tungsten blank and indicated that it could remove the impurity effectively by technology of ammonia neutralization,neutralization and crystallization and ultrahigh temperature,vacuum and degassing.The high pure tungsten materials had good quality,stable property and a few of air blood.

关 键 词：高纯钨 薄膜 粉末冶金 溅射 靶材 

分 类 号：TF123.24[冶金工程—粉末冶金] TB41[冶金工程—冶金物理化学]