基于RC网络集成电路的多晶硅薄膜电阻工艺优化  

OPTIMIZATION PROCESS OF POLY-SILICON THIN-FILM RESISTOR IN RC NETWORK IC

作　　者：万鹏程[1] 刘世龙[2] 孙芳魁[2] 

机构地区：[1]哈尔滨学院 [2]哈尔滨工业大学

出　　处：《哈尔滨师范大学自然科学学报》2008年第5期50-53,共4页Natural Science Journal of Harbin Normal University

基　　金：黑龙江省教育厅科学技术研究项目(11513046)

摘　　要：介绍基于RC[1]网络集成电路中的制作多晶硅电阻工艺和掺杂方法,并详细阐述了这种方法的工艺过程和控制方式.利用LPCVD方式制作多晶硅薄膜,可以得到很好的膜层均匀性和最佳的淀积速率,再利用POC l3进行高温掺杂[2],得到优化的电阻率,灵活改变各种参数,可使电阻的精度优于5%.Thin - film resistors made of poly - silicon show better precision and stability, greatly enhancing the flexi- bility of the process. This paper introduces the fabrication and doping method of poly - silicon resistors in RC network ICs, and describes in detail the process and control mode of this method. We get a better uniformity in film thickness and an optimal deposition rate, which the poly - silicon thin film made by LPCVD. Then, Combined with high - temperature POCL3 doping, as well as flexible parameters adjusting, an optimal resistivity can be achieved, and the tolerance of poly - silicon thin film resistor is less than 5%.

关 键 词：多晶硅 RC网络 掺杂工艺 薄膜电阻 

分 类 号：TN402[电子电信—微电子学与固体电子学] TP212[自动化与计算机技术—检测技术与自动化装置]