硅衬底垂直结构InGaAlN多量子阱发光二极管电致发光谱的干涉现象研究  

The investigation on the interference phenomenon in electroluminescence spectrum of vertical structured InGaAlN multiple quantum well light-emitting diodes

作　　者：熊传兵[1,2] 江风益[1,2] 王立[1,2] 方文卿[1,2] 莫春兰[1,2] 

机构地区：[1]南昌大学教育部发光材料与器件工程研究中心,南昌330047 [2]晶能光电(江西)有限公司,南昌330029

出　　处：《物理学报》2008年第12期7860-7864,共5页Acta Physica Sinica

基　　金：国家高技术研究发展计划(批准号:2005AA311010;2003AA302160);信息产业部电子发展基金(批准号:2004125;2004479)资助的课题~~

摘　　要：测试了硅衬底垂直结构芯片在不同空间角度上的电致发光(EL)谱.指出硅衬底垂直结构InGaAlN多量子阱发光二极管的EL谱中多个峰型来源于干涉现象,而不是来自于多个阱层的发光.干涉峰的疏密反映p型层厚度的一致性,干涉现象的强弱反映p型欧姆接触层反光能力的强弱.芯片法线方向附近发光最强干涉现象最明显,芯片侧边的发光几乎没有干涉现象且发光强度最弱.The electroluminescence （EL） spectrum of vertical structured InGaN multiple-quantum-well light-emitting diodes were obtained at different space angles. It was found that the multiple EL peak pattern was caused by the interference phenomenon and the distance between the peaks could indicate the thickness uniformity of the p-type layer. The intensity difference between the wave crest and the wave trough of the peak pattern indicates the reflectance ratio of p-type ohmic contact layer. The integral EL intensity in the normal direction of the chip was not so strong, while in the directions of 80° and 75° the intensities were the largest and the interference phenomenon was the sharpest. The intensity of the EL and the interference phenomenon of the side face of the chip was the weakest.

关 键 词：InGaAlN 发光二极管 垂直结构 电致发光 

分 类 号：TN312.8[电子电信—物理电子学]