Realization of Ultraviolet Electroluminescence from ZnO Homo junction Fabricated on Silicon Substrate with p-Type ZnO：N Layer Formed by Radical N2O Doping  

作　　者：孙景昌 梁红伟 赵涧泽 边继明 冯秋菊 王经纬 赵子文 杜国同 

机构地区：[1]School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024

出　　处：《Chinese Physics Letters》2008年第12期4345-4347,共3页中国物理快报（英文版）

基　　金：Supported by the National Natural Science Foundation of China under Grant Nos 60576054, 50532080 and 10804014, China Postdoctoral Science Foundation （No 20070411069）, 2008 Youth Teacher Cultivation Fund by Dalian University of Technology, Ministry of Education of China through Doctor Subject Scientific Research Foundation under Grant No 20070141017, the Natural Science Foundation of Liaoning Province under Grant No 20072178, Open Fund by Key Laboratory for MEMS, Liaoning Province.

摘　　要：ZnO homojunction light-emitting diodes are fabricated on Si（100） substrates by plasma assisted metal organic chemical vapour deposition. A p-type layer of nitrogen-doped ZnO film is formed using radical N2O as the acceptor precursor. The n-type ZnO layer is composed of un-doped ZnO film. The device exhibits desirable rectifying behaviour with a turn-on voltage of 3.3 V and a reverse breakdown voltage higher than 6 V. Distinct electrolumineseence emissions centred at 395nm and 490nm are detected from this device at forward current higher than 20mA at room temperature.ZnO homojunction light-emitting diodes are fabricated on Si（100） substrates by plasma assisted metal organic chemical vapour deposition. A p-type layer of nitrogen-doped ZnO film is formed using radical N2O as the acceptor precursor. The n-type ZnO layer is composed of un-doped ZnO film. The device exhibits desirable rectifying behaviour with a turn-on voltage of 3.3 V and a reverse breakdown voltage higher than 6 V. Distinct electrolumineseence emissions centred at 395nm and 490nm are detected from this device at forward current higher than 20mA at room temperature.

关 键 词：field emission molybdenum dioxide enhancement factor 

分 类 号：O56[理学—原子与分子物理]