Composition Dependence of Surface Phonon Polariton Mode in Wurtzite InxGa1-xN （0 ≤ x ≤ 1） Ternary Alloy  

作　　者：S. S. Ng Z. Hassan H. Abu Hassan 

机构地区：[1]Nano-Optoelectronics Research and Technology Laboratory, School of Physics, Universiti Sains Malaysia, 11800 Minden, Pulau Pinang, Malaysia

出　　处：《Chinese Physics Letters》2008年第12期4378-4380,共3页中国物理快报（英文版）

摘　　要：We present a theoretical study on the composition dependence of the surface phonon polariton （SPP） mode in wurtzite structure α-InxGa1-xN ternary alloy over the whole composition range. The SPP modes are obtained by the theoretical simulations by means of an anisotropy model. The results reveal that the SPP mode of α-InxGa1-xN semiconductors exhibits one-mode behaviour. From these data, composition dependence of the SPP mode with bowing parameter of-28.9 cm^-1 is theoretically obtained.We present a theoretical study on the composition dependence of the surface phonon polariton （SPP） mode in wurtzite structure α-InxGa1-xN ternary alloy over the whole composition range. The SPP modes are obtained by the theoretical simulations by means of an anisotropy model. The results reveal that the SPP mode of α-InxGa1-xN semiconductors exhibits one-mode behaviour. From these data, composition dependence of the SPP mode with bowing parameter of-28.9 cm^-1 is theoretically obtained.

关 键 词：field emission molybdenum dioxide enhancement factor 

分 类 号：O4[理学—物理]