Al掺杂SnO_2材料的NTC热敏特性的研究  

Study on the NTC thermosensitive characteristic of Al-doped SnO_2 materials

作　　者：张鸿[1] 彭斌[1] 屈啸[1] 蒋波[1] 李志成[1] 

机构地区：[1]中南大学材料科学与工程学院,湖南长沙410083

出　　处：《电子元件与材料》2008年第12期25-26,29,共3页Electronic Components And Materials

基　　金：教育部留学回国人员科研启动基金资助项目(No.2006331;No.20071108);教育部高校博士点专项科研基金资助项目(No.20070533119)

摘　　要：利用共沉淀方法制备了Al掺杂SnO2材料。并通过XRD与R-t特性测试仪,研究其相结构与R-t特性。结果表明:600℃煅烧获得了高纯、四方相的Al掺杂SnO2,其晶粒度为9.8nm;且具有良好的NTC效应,材料常数为4484K。利用半导体热力学理论讨论了Al掺杂SnO2材料的NTC特性机理。Al-doped SnO2 material was prepared by coprecipitation method. And its phase structure and R-t characteristic were investigated by XRD and R-t characteristic tester. The results show that high pure tetragonal phase of Al-doped SnO2 with the crystallite of 9.8 nm is obtained by calcination at 600 ℃, and the materials have a good effect of negative temperature coefficient of resistance with the material constants of 4 484 K. The mechanism for NTC characteristic is discussed by using thermodynamics theory of semiconductor.

关 键 词：SNO2 AL掺杂 导电性 NTC 热力学 

分 类 号：TB381[一般工业技术—材料科学与工程]