BiFeO3／Bi4Ti3O12多层铁电薄膜的性能研究  

Study on the ferroelectric property of BiFeO_3/Bi_4Ti_3O_(12) multilayer film

作　　者：王秀章[1] 晏伯武[2] 刘红日[1] 

机构地区：[1]湖北师范学院物理与电子科学学院,湖北黄石435002 [2]黄石理工学院计算机学院,湖北黄石435003

出　　处：《电子元件与材料》2008年第12期63-65,共3页Electronic Components And Materials

基　　金：国家自然科学基金资助项目(No.10874075);湖北省教育厅重点科技项目基金资助项目(No.D20082203);黄石市科技攻关计划项目基金资助项目(No.黄科技发成[2006]18)

摘　　要：采用sol-gel法在FTO/玻璃底电极上制备了BiFeO3/Bi4Ti3O12多层薄膜。研究了室温下薄膜的结构,铁电和漏电流性质。结果表明,相对于纯的BiFeO3薄膜,BiFeO3/Bi4Ti3O12多层薄膜具有更低的漏电流,表现出较强的铁电性,在4.40×105V/cm的测试电场强度下,剩余极化强度为3.7×10–5C/cm2。在2.00×105V/cm的测试电场强度下,BiFeO3和BiFeO3/Bi4Ti3O12薄膜的漏电流密度分别为10–5和10–7A/cm2。BiFeO3 / Bi4Ti3O12 multilayer film was prepared on FTO/glass bottom electrodes by sol-gel process. Its structure, ferroelectric and leakage conduction properties at room temperature were studied. The results show that comparing with pure BiFeO3 film, the BiFeO3/Bi4Ti3O12 multilayer film has lower leakage current and show more intense ferroelectricity. The remnant polarization of the multilayer film is 3.7×10^-5 C/cm^2 while the test electric field strength is 4.40×10^5 V/cm. in the 2.00×10^5 V/cm, the leakage current of pure BiFeO3 film and the BiFeO3 / Bi4Ti3O12 multilayer film is 10^-5 A/cm^2 and 10^-7A/cm^2, respectively.

关 键 词：无机非金属材料 铁磁电材料 BIFEO3薄膜 Bi4Ti3O12多层薄膜 铁电性 

分 类 号：TM22[一般工业技术—材料科学与工程] TM27[电气工程—电工理论与新技术]