Sol-gel法制备SrTiO_3薄膜的电阻开关性能研究  

Study on the resistive switching properties of SrTiO_3 thin films prepared by sol-gel method

作　　者：苏朝辉[1] 张婷[1] 王继鹏[1] 张盈[1] 张伟风[1] 

机构地区：[1]河南大学物理与电子学院光子与光子技术重点实验室微系统物理研究所,河南开封475004

出　　处：《电子元件与材料》2008年第12期66-69,共4页Electronic Components And Materials

基　　金：河南省高校创新人才培养工程资助项目(No.2002006)

摘　　要：采用sol-gel法制作了28nm厚的SrTiO3薄膜和Au/SrTiO3/LaNiO3/Si(100)三明治结构的器件,并研究其物理性能。结果显示:室温下,用直流电压可以使薄膜的电阻在高低阻态间进行转换。最大的电阻变化率约为10309。对I-V特性的分析,发现在高阻态时,有空间电荷限制电流机制(SCLC)和肖特基势垒导电机制存在。应用在高场区有非对称电子陷阱中心的空间电荷限制电流理论,解释了这种电阻开关现象。The 28 nm thicks SrTiO3 （STO） thin films on LaNiO3/Si（100） substrate were prepared by sol-gel method to form Au/SrTiO3/LaNiO3/Si（100） sandwich structure device. Its physical properties were studied. The results show that direct current voltage can switch the resistance of the thin films between low and high state at room temperature. The maximum change rate between these two resistance states is about 10 309. Analyses of I-V behaviors were executed, and it is suggested that the current-voltage characteristics are governed by the Schottky conduction mechanism and space-charge-limited-current conduction in high-impedance state. The switching process is explained in terms of space-charge-limited-current conduction in higher voltage region caused by asymmetric electron trapping centers.

关 键 词：电阻开关 交流阻抗谱 肖特基发射 空间电荷限制电流 电子陷阱 

分 类 号：TN452[电子电信—微电子学与固体电子学] TB383[一般工业技术—材料科学与工程]