A new physics-based self-heating effect model for 4H-SiC MESFETs  

作　　者：曹全君 张义门 张玉明 

机构地区：[1]Key Lab of Education Ministry for Wide Band-Gap Semiconductor Materials and Devices,School of Microelectronics, Xidian University

出　　处：《Chinese Physics B》2008年第12期4622-4626,共5页中国物理B（英文版）

基　　金：Project supported by the National Defense Foundation of China (Grant No 51327010101);the National Natural Science Foundation of China (Grant No 60606022)

摘　　要：A new self-heating effect model for 4H-SiC MESFETs is proposed based on a combination of an analytical and a computer aided design （CAD） oriented drain current model. The circuit oriented expressions of 4H-SiC low-field electron mobility and incomplete ionization rate, which are related to temperature, are presented in this model, which are used to estimate the self-heating effect of 4H-SiC MESFETs. The verification of the present model is made, and the good agreement between simulated results and measured data of DC I - V curves with the self-heating effect is obtained.A new self-heating effect model for 4H-SiC MESFETs is proposed based on a combination of an analytical and a computer aided design （CAD） oriented drain current model. The circuit oriented expressions of 4H-SiC low-field electron mobility and incomplete ionization rate, which are related to temperature, are presented in this model, which are used to estimate the self-heating effect of 4H-SiC MESFETs. The verification of the present model is made, and the good agreement between simulated results and measured data of DC I - V curves with the self-heating effect is obtained.

关 键 词：4H silicon carbide metal semiconductor field effect transistor self-heating effect com puter aided design 

分 类 号：TN386[电子电信—物理电子学]