最佳结构6英寸UHVDC晶闸管  

Six Inch Thyristor Optimised for UHVDC

作　　者：王正鸣[1] 陆剑秋[1] 

机构地区：[1]西安电力电子技术研究所,陕西西安710061

出　　处：《电力电子技术》2008年第12期20-22,共3页Power Electronics

基　　金：国家科技支撑计划(2006BAA02A27)~~

摘　　要：经过对各种高压电力半导体器件实用模型的分析,设计了长、短基区最薄,P区径向变掺杂的一种双负角6英寸晶闸管,该晶闸管具有在获取一定高电压的同时能获取最大通态电流、最佳协调各动静态参数的唯一性。以特高压直流输电(UHVDC)应用要求为最终目的,对制造工艺实施必要的少数载流子寿命分布全程二维监控,研究获得高质量的工艺加工水平及高精度、高均匀性的目标寿命控制。经设计及工艺定型后,最终形成了批量生产。By analysis of available power semiconductor device models,a symmetric beveled six-inch thyristor structure with minimum base thickness,P-type radial doping variation is designed,and proved to be an only structure to attain a quite high blocking voltage with maximum forward current capacity and optimized performances,To meet the requirements of UHVDC and keep the process high quality,minority carrier life-times for each process are well traced and displayed two-dimensionally.Minority carrier life-time target value and its uniformity are controlled accurately.Large volume of production is being supported by the design and technology.

关 键 词：晶闸管 特高压输电 寿命 

分 类 号：TN34[电子电信—物理电子学]