掺碳SiGe二极管反向阻断特性模拟与机理分析  

Reverse Blocking Characteristics Simulation and Mechanism Analysis of SiGe Diodes with Carbon Incorporation

作　　者：刘静[1] 高勇[1] 

机构地区：[1]西安理工大学,陕西西安710048

出　　处：《电力电子技术》2008年第12期42-45,共4页Power Electronics

基　　金：国家自然科学基金资助项目(50477012);高等学校博士学科点专向科研基金资助项目(2005070-0006);西安理工大学优秀博士学位论文研究基金资助项目~~

摘　　要：深入研究了掺碳SiGe(SiGeC)功率二极管的反向阻断特性,给出了详细的机理分析。与同结构SiGe二极管相比,SiGeC二极管的热稳定性显著提高,反向漏电流明显减小,击穿电压也有所增加,且随着温度的升高,其优势更加明显。与少子寿命控制技术相比,该SiGeC/Si异质结二极管有效协调了降低通态电压、减小反向漏电流、缩短反向恢复时间3者之间的矛盾。其较好的热稳定性降低了对器件后续制作工艺的限制,而且无需采用寿命控制技术,在制作过程中可调节Ge,C含量来对异质结能带结构进行剪裁,折中优化器件性能,给器件设计提供了更大的自由度。The reverse blocking characteristics of SiGe power diodes with carbon incorporation are studied deeply and their mechanisms are also given.Compared to SiGe diodes with the same structures,the thermal stability is improved remarkably, reverse leakage current is reduced largely and breakdown voltage is increased to some extent for SiGeC diodes.The advantages of SiGeC diodes are more obvious at high temperature.Compared to lifetime control technology of minority cartier, the contradictions among decreasing on-state voltage,reducing reverse leakage current and shorting reverse recovery time are coordinated effectively.The high thermal stability of the devices reduces the restrictions on subsequent process and is of benefit to power integration.The device characteristics can be optimized by adjusting Ge and C contents without lifetime control technology,which provides more freedoms for device design.

关 键 词：半导体二极管 模拟/阻断特性 寿命控制 

分 类 号：TN313.4[电子电信—物理电子学]