高电位梯度ZnO压敏电阻的高压稳压性能研究  

The voltage stabilization of high voltage gradient ZnO varistors

作　　者：柯磊[1] 蒋冬梅[1] 王春霞[1] 马学鸣[1] 

机构地区：[1]华东师范大学物理系精密光谱科学与技术国家重点实验室,上海200062

出　　处：《功能材料》2008年第12期2082-2084,共3页Journal of Functional Materials

基　　金：国家自然科学基金资助项目(50471045)

摘　　要：采用稀土掺杂和低温烧结的方法制备出高电位梯度的ZnO压敏电阻,并研究了Y2O3掺杂浓度对试样电位梯度和稳压性能的影响。结果表明,在800℃的烧结条件下,掺杂0.08%(摩尔分数)Y2O3后试样的电位梯度增加了49%,稳压系数达到1.99×10-2。从微观角度对ZnO压敏电阻烧结过程中的物化反应分析发现,较低的烧结温度能够抑制Y2O3的受主固溶和Bi2O3的挥发,减缓晶粒的生长速度,改善晶界质量,从而提高试样的电位梯度,实现高压稳压。High voltage gradient ZnO varistors were fabricated by Y2O3 doping and low-temperature sintering. The effect of Y2O3 concentrations on voltage stabilization was investigated. Experimental results show that the values of voltage gradient and stabilization coefficient respectively reach to 2460.5V/mm and 1.99 × 10^-2 with Y2O3 content of 0.08mol% and sintering temperature of 800℃. Microstructure analysis indicates that it is diffi- cult for Y^3＋ ions to solid dissolve into ZnO grains at the lower temperature, as well as the volatilization of Bi2O3. Notable decrease of grain size with the given experimental conditions, which causes a remarkable increase in the quantity of grain boundaries, is the origin for the increase in voltage gradient.

关 键 词：ZNO压敏电阻 高压稳压 电位梯度 Y2O3掺杂 

分 类 号：TM283[一般工业技术—材料科学与工程]