Chloride Assisted Growth of Aluminum Nitride Nanobelts and Their Enhanced Dielectric Responses  

作　　者：Ting Xie Min ye Zhi Jiang Yong Qin Yu-cheng Wu Guo-wen Meng Li-de Zhang 

机构地区：[1]Institute of Tribology, Hefei University of Technology, Hefei 230009, China [2]Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031, China

出　　处：《Chinese Journal of Chemical Physics》2008年第6期586-590,共5页化学物理学报（英文）

基　　金：ACKNOWLEDGMENTS This work was supported by the National Natural Science Foundation of China （No.10674138 and No.20571022）. The authors express their appreciations to Professor Q. F. Fang, Dr. X. P. Wang, and Mr. Z. J. Cheng for the technical support and helpful discussions in the dielectric measurements.

摘　　要：Aluminum nitride （AlN） nanobelts were successfully synthesized in high yield through a chloride assisted vapor-solid process. X-ray diffraction, transmission electron microscopy, and selected area electronic diffraction demonstrate that the as-prepared nanobelts are pure, structurally uniform and single crystalline, and can be indexed to hexagonal wurtzite structure. The micro observations show that there exist no defects in the obtained nanobelts. The growth direction of the nanobelts is along [0001]. The frequency spectra of the relative dielectric constant and of the dielectric loss were measured in the frequency range of 50 Hz to 5 MHz. Analysis of these spectra indicates that the interface in samples has great influence on the dielectric behavior of samples. As compared with AlN micropowders, AlN nanobelts have much higher relative dielectric constant, especially at low frequencies at room temperature.

关 键 词：Aluminum nitride NANOBELT Chloride assisted growth Dielectric property 

分 类 号：TQ153.15[化学工程—电化学工业] TN304.9[电子电信—物理电子学]