薄膜Se对薄膜Al电极的防护作用探讨  

Protection Performance Study on Al Electrode of Se Film

作　　者：李志贤[1] 赵彦钊[1] 张方辉[2] 

机构地区：[1]陕西科技大学材料科学与工程学院,西安710021 [2]陕西科技大学电子与信息工程学院,西安710021

出　　处：《硅酸盐通报》2008年第6期1271-1273,1277,共4页Bulletin of the Chinese Ceramic Society

基　　金：陕西省专利产业化项目(2005ZZ-04);陕西省教育厅产业化项目(06JC23);陕西省教育厅专项科研计划项目(07JK191)

摘　　要：本文在25℃、相对湿度50%的条件下,分别蒸镀了Al,Al/Se薄膜,研究了它们在空气中的导电性能,试验结果表明,只需50s,Al薄膜的氧化反应已基本完成,其电阻率变化率为24.9%;大约需要2min,Al/Se薄膜电阻变化率为4.5%,随后其电阻基本处于稳定状态。这主要是因为薄膜边沿和镀Se薄膜时形成的针孔的铝膜首先被氧化,使电阻增加。形成的Al2O3薄膜阻止了反应的继续进行,电阻不再变化。When the relative humidity is 50%, the Al and Al/Se films were evaporated at 25 ℃, and their conductive performance was studied. The results indicate that the reaction of Al film with water and oxygen is finished in only 50 s, and the change rate is 24.9%. The change rate of Al/Se is 4.5% in less than 2 min. Later, the resistance is in stabilization state. The mainly reason is the Al film in the edge and pinhole formed in the process of evaporating is oxided first, which induce the resistance increase. The formed Al2O3 film prevented the oxidation.

关 键 词：电阻变化率 稳定性 Al薄膜 Al/Se薄膜 

分 类 号：TB321[一般工业技术—材料科学与工程]