空穴缓冲层2T-NATA厚度对OLED器件性能的影响  

Effect of Hole Buffer Layer 2T-NATA Thickness on OLED Performances

作　　者：牟强[1] 王秀峰[2] 张麦丽[1] 

机构地区：[1]陕西科技大学电气与信息工程学院,陕西西安710021 [2]陕西科技大学材料科学与工程学院,陕西西安710021

出　　处：《液晶与显示》2008年第6期680-683,共4页Chinese Journal of Liquid Crystals and Displays

基　　金：国家自然科学基金(No.20476054);陕西省教育厅专项研究基金(No.03JK1610)

摘　　要：在有机电致发光器件中,载流子的注入和匹配水平直接影响着器件性能。在器件中引入空穴缓冲传输层2T-NATA,能够有效改善阳极与有机层的接触,改变有机层中的势垒分布,提高载流子的注入和平衡水平,使激子复合率得到有效改善,从而使器件发光特性大幅提高。The performances of OLED is influenced by the level of current carrier injection and its balance. The hole buffer layer 2T-NATA was drawn into the OLED, which can improve the contact of anode with organic film. The distribution of barrier in organic layer can be changed. At the same time, it can improve the level of current carrier injection and its balance. Thereby the complex rate can be improved as well as the characteristics of luminescence.

关 键 词：空穴缓冲层 2T-NATA 发光效率 

分 类 号：TN304.3[电子电信—物理电子学] TN304.5