CeO_2掺杂对NBT-KBT-BT无铅压电陶瓷性能的影响  

Influence of CeO_2 Doping on Properties of NBT-KBT-BT Lead-free Piezoelectric Ceramics

作　　者：黄新友[1] 魏敏先[1] 陈志刚[1] 高春华[1] 崔永臻[1] 

机构地区：[1]江苏大学材料科学与工程学院,镇江212013

出　　处：《人工晶体学报》2008年第6期1489-1492,1523,共5页Journal of Synthetic Crystals

摘　　要：采用固相法,利用XRD、SEM等测试分析方法,系统研究了CeO2掺杂对0.85(Na0.5Bi0.5)TiO3-0.144(K0.5Bi0.5)TiO3-0.006BaTiO3(NBT-KBT-BT)无铅压电陶瓷结构和性能的影响。研究结果表明:所有组成的陶瓷的物相均为单一钙钛矿型结构相,CeO2的掺杂只改变晶胞体积或产生铋离子空位或钠离子空位,不形成异相。CeO2掺杂使晶粒尺寸趋于平均,形状由四方状向粒状转变,对晶粒生长有抑制作用。随着CeO2掺杂量增加,压电陶瓷的压电应变常数d33先增大然后降低、介电常数ε先增大然后降低,介质损耗tanδ一直降低。当CeO2的掺杂量为0.1%质量分数时,NBT-KBT-BT无铅压电陶瓷的综合性能最佳,其性能为:d33=156pC/N、tanδ=3.8%、ε=1364。0.85 （ Na0.5 Bi0.5 ） TiO3-0. 144 （ K0.5 Bi0.5 ） TIO3-0.006 BaTiO3 （NBT-KBT-BT） lead-free piezoelectric ceramic was prepared using conventional solid state method. The influence of CeO2 doping on crystal phase, surface microstructuro and properties of the lead free piezoelectric ceramics were investigated using XRD, SEM and other analytical methods. The results show that all compositions are of pure perovskite structure solid states, CeO2 doping changes crystal cell dimension and produces Bi^3＋ or Na^＋ vacancy, CeO2-doping makes grain crystal size uniform, changes tetragonal into granular structure and restrains crystal grain growth. The piezoelectric strain constant （d33） and the dielectric constant（ε） starts increasing and then decreasing , the dielectric loss （tanδ） decreases when the amount of CeO2 dopant increasing . When the doping amount of CeO2 is 0. 1 wt%, the NBT-KBT-BT piezoelectric ceramics with good comprehensive properties can be obtained, the piezoelectric strain constant （d33）, 8 and tanδ of it is 156 pC/N,1364 and is 3.8% ,respectively.

关 键 词：无铅压电陶瓷 掺杂 性能 CEO2 

分 类 号：TM223[一般工业技术—材料科学与工程]