CuInS_2:两步电沉积制备及性能  

Growth and Properties of CuInS_2 by Two-step Electrodeposition and Solid-state Sulfurzation

作　　者：刘小雨[1] 王广君[1] 田宝丽[1] 余腊锋[1] 张兴堂[1] 杜祖亮[1] 

机构地区：[1]河南大学特种功能材料教育部重点实验室,开封475004

出　　处：《无机化学学报》2008年第12期2035-2038,共4页Chinese Journal of Inorganic Chemistry

基　　金：国家自然科学基金(No.90306010);教育部新世纪优秀人才计划(No.NCET-04-0653);国家重点基础研究计划(No.2007CB616911)资助项目。

摘　　要：采用恒电位沉积法制备铜铟合金预制膜,并在管式炉中通过固态源蒸发硫化预制膜得到CuInS2薄膜。通过扫描电镜(SEM)、能量色散谱仪(EDS)和X射线衍射仪(XRD)对CuInS2薄膜的表面形貌、截面厚度、成分组成和薄膜的组织结构进行了研究,并利用紫外可见光吸收谱仪(UV-Vis)研究了不同硫化温度对CuInS2薄膜的形貌及其光学吸收性质的影响。结果表明:不同的退火温度能够影响CuInS2薄膜的表面形貌以及带隙的大小,从而影响其光学吸收特性。CuInS2 thin films were prepared by electrodeposition and by sulfurization in sublimed sulfur atmosphere. The morphology and composition as well as the thickness and crystal of the thin film were characterized with scanning electron microscopy（SEM）, X-ray energy dispersive spectroscopy（EDS） and X-ray diffraction（XRD）. UV-Vis absorption spectroscopy was used to study the optical properties of films with different annealing found that annealing temperature has an effect on the morphology and the band-~ao value of th temperatures. It is found that annealing temperature has an effect on the morphology and the band-gap value of the films, as a result influences the optical properties.

关 键 词：电沉积 固态源蒸发硫化 退火温度 光学特性 

分 类 号：O614.121[理学—无机化学] O614.37[理学—化学]