SiC_p/Al电子封装材料与陶瓷元件浸渗连接机理研究  

Mechanism of Infiltration Jointing Between SiC_p/Al Electronic Packaging Materials and Ceramic Components

作　　者：陈闯[1] 于家康[1] 杨博[1] 

机构地区：[1]西北工业大学凝固技术国家重点实验室,陕西西安710072

出　　处：《热加工工艺》2008年第23期1-4,共4页Hot Working Technology

基　　金：国家自然科学基金资助项目(69976022)

摘　　要：分别将陶瓷元件嵌入凝胶注模成型后的SiC预制型中,再采用气压浸渗工艺制备高体积分数SiCp/Al复合材料的同时,实现了复合材料与元件的原位连接。采用SEM、EDS和XRD等分析了连接界面的显微组织及界面反应,结果表明:SiCp/Al与元件间的界面反应产物由MgAl2O4和Mg3Al2(SiO4)3等组成,界面反应层厚度约2～3μm,产物生成量主要由Al合金中的Mg、元件中SiO2含量等因素决定;SiCp/Al复合材料与Al2O3元件通过气压浸渗可以实现有效的反应连接。SiC preforms were prepared by gel casting moulds that were embedded with Al2O3 substrate and Al2O3 insulator respectively, then high volume fraction SiCp/Al composites were fabricated by gas pressure infiltration, in-situ joints between SiCp/Al composites and ceramic components were achieved. Microstructure and interracial reaction were analyzed by SEM, EDS and XRD. The results show that the interracial reaction products between SiCp/Al composites and Al2O3 ceramic components are made of MgAl2O3 and Mg3Al2 （SiO4）3, the thickness of the reaction products is about 2-3 μm, and the quantity of the products are mainly dependent on the quantity of Mg in aluminum alloy and SiO2 in the components. The reaction jointing between SiCp/Al composites and Al2O3 components are achieved by gas pressure infiltration effectively.

关 键 词：SICP/AL 复合材料 浸渗 连接 

分 类 号：TB33[一般工业技术—材料科学与工程]