碳化硅陶瓷的放电等离子烧结  

Spark plasma sintering of silicon carbide

作　　者：张勇[1] 何新波[1] 曲选辉[1] 王玉会[1] 

机构地区：[1]北京科技大学材料科学与工程学院,北京100083

出　　处：《北京科技大学学报》2008年第12期1414-1417,共4页Journal of University of Science and Technology Beijing

基　　金：教育部新世纪优秀人才支持计划资助项目(No.NCET-06-0081);国家自然科学基金资助项目(No.50404012)

摘　　要：采用添加了Al2O3和Y2O3助烧剂的碳化硅微粉为原料,通过放电等离子烧结(SPS)技术快速制备了碳化硅陶瓷.分析了材料致密化过程,并重点研究了烧结工艺参数对材料致密度和力学性能的影响规律.结果表明,当SPS工艺参数的烧结温度和压力分别为1600℃和50MPa时,经过5min的烧结,碳化硅陶瓷的致密度可达到99.1%,硬度为HV2550,断裂韧性达8.34MPa.m1/2,弯曲强度达684MPa.Silicon carbide （SIC） ceramics with submicron silicon carbide as raw material and Al2O3 and Y2O3 as sintering additives were fabricated by spark plasma sintering （SPS）. The densification process of the materials was analyzed, and the effects of sintering temperature, sintering pressure and time on the densification and mechanical properties were investigated. It is found that the SiC with a relative density of 99.1% can be achieved when the sintering temperature, sintering pressure and holding time are 1 600 ℃, 50 MPa and 5 min, respectively. The mechanical properties of the sintered SiC are HV 2550 in hardness, 8.34 MPa· m^1/2 in fracture toughness and 684 MPa in bending strength.

关 键 词：碳化硅陶瓷 放电等离子烧结 致密度 力学性能 

分 类 号：TB383.2[一般工业技术—材料科学与工程] TQ174.758.12[化学工程—陶瓷工业]