超声电沉积-硒化制备CuInSe2薄膜  

PREPARATION OF CuInSe_2 THIN FILMS BY ULTRASONIC ELECTRODEPOSITING-SELENIZATION

作　　者：王延来[1] 聂洪波[1] 倪沛然 果世驹 杨永刚[3] 

机构地区：[1]北京科技大学材料科学与工程学院,北京100083 [2]无锡爱芯科微电子有限公司,无锡214028 [3]北京科技大学,材料科学与工程学院北京100083

出　　处：《太阳能学报》2008年第12期1534-1537,共4页Acta Energiae Solaris Sinica

摘　　要：采用超声电沉积法在钼基底上制备了 Cu-In 合金预制膜,随后在硒蒸汽进行硒化处理,得到了 CuInSe_2(CIS)薄膜。分别用 SEM、EDS 和 XRD 分析了合金预制膜和 CuInSe_2薄膜的表面形貌、成分及相组成。结果表明:超声电沉积可以得到晶粒细小、均匀致密的 Cu-In 合金薄膜,并且可以利用电流密度控制预制膜中的 Cu/In 比率;随着Cu 含量的增加,CIS 薄膜的结晶性变好;富铜的 CIS 薄膜中除了 CuInSe_2以外还有 CuSe 相,CuSe 的含量随铜含量的增加而增力口。The Cu-In alloy precursor films were deposited on Mo substrate by ultrasonic electrodepositing. The CuInSe2 thin films were prepared after subsequent selenization of Cu-In alloy films in Se vapor. Surface morphology, chemical composition and phase component of alloy precursor and the CuInSe2 thin films were investigated by scanning electron morphology （SEM）, energy dispersive spectroscopy （EDS） and X-ray diffraction （XRD）. The results show that compact films of the fine grains can be obtained by ultrasonic-electrodepositing and the Cu/In ratio can be adjusted by different current density; The crystallinity of CIS films are improved as copper content rises. Except for CuInSe2, there is also CuSe phase in Cu-rich CIS films, and the content of CuSe is enhanced by higher copper content.

关 键 词：超声电沉积 合金预制膜 CIS薄膜 表面形貌 

分 类 号：TB43[一般工业技术]