InP/InGaAs HBT的频率特性分析  

Frequency Performance Analysis of InP/InGaAs HBT

作　　者：马晓晖[1] 黄永清[1] 黄辉[1] 吴强[1] 任晓敏[1] 

机构地区：[1]北京邮电大学光通信与光波技术教育部重点实验室,北京100876

出　　处：《光电子技术》2008年第3期156-160,164,共6页Optoelectronic Technology

基　　金：国家973项目(2003CB314900);国家自然科学基金资助项目(60576018);高等学校学科创新引智计划项目;教育部"新世纪人才支持计划"项目(NCET-05-0111)

摘　　要：频率特性是异质结双极型晶体管(HBT)设计中应首先考虑的因素,而fT,fmax则是HBT最主要的频率性能指标。首先基于InP/InGaAs HBT器件的物理结构构建了小信号等效电路模型,对该模型进行了理论分析,随后基于提取的有效参数结果,对该等效电路模型的频率特性进行了详细的计算和仿真,分析了影响fT,fmax的一些主要因素,得出的结论对于InP/InGaAs HBT的设计制作和性能优化具有一定的指导作用。Frequency performance is the first key factor in the design of heterojunction bipolar transistor （HBT）, fτ and fmax are the main frequency parameters. In this paper, InP/InGaAs HBT small-signal equivalent circuit model was introduced based on its structure at the beginning. Next, the circuit model had been analyzed theoretically. Then based on the exact parameter extraction result, the circuit model had been performed calculated and simulated. Some main factors which affect fτ, fmax was analyzed, the conclusion shows that it might be very useful to instruct the design and optimization of InP/InGaAs HBT.

关 键 词：异质结双极型晶体营 小信号电路模型 截止频率 功率增益 

分 类 号：TN322.8[电子电信—物理电子学]