ITO透明导电薄膜的制备工艺研究  

Technological Study on Preparation of Indium Tin Oxide Thin Film

作　　者：朱小娟[1] 李新贝 

机构地区：[1]陕西科技大学电气与信息工程学院,西安710021 [2]中国航天科技集团五院五一三所,山东烟台264000

出　　处：《光电子技术》2008年第3期202-206,共5页Optoelectronic Technology

摘　　要：采用溶胶-凝胶法以InCl3.4H2O和SnCl4.5H2O为前驱物在玻璃基片上制备了ITO透明导电薄膜。详细研究了热处理初始温度、溶胶浓度、热处理温度、热处理时间、铟锡比例以及镀膜层数对薄膜光电特性的影响,得出了最佳工艺条件。结果表明,采用最佳工艺制备的ITO透明导电薄膜为体心立方的In2O3结构,Sn4+离子取代In2O3晶格中的In3+离子,样品不含低价氧化锡,薄膜方阻达到600Ω/□,可见光透过率达到83%。The Sn-doped In2O3 thin films were prepared on the glass substrates by sol-gel method with InCl3 · 4H2O and SnCl4· 5H2O. The influence of the technics parameters was studied on optical and electrical properties of indium tin oxide （ITO） films, and these parameters consist of the doping rate of In ： Sn, annealing temperature and annealing time and so on. These resuits showed that ITO film with the best optical and electric performance could be prepared only when technics parameters in best ranges. The sheet resistance of the ITO films prepared under the optimum technics condition is properly 600Ω/□, and the average visible transmittance can reach 83%. The study can give some insight in the preparation of ITO film.

关 键 词：氧化铟锡薄膜 溶胶-凝胶法 方阻 透光率 

分 类 号：TN304.055[电子电信—物理电子学]