一种基于匹配优化的BiCMOS带隙基准源的实现  

Implementation of a BiCMOS Bandgap Reference Source Based on Matching Improvement

作　　者：徐波[1] 浦寿杰[1] 顾晓峰[1] 徐振 于宗光[1,3] 

机构地区：[1]江南大学信息工程学院,江苏无锡214122 [2]无锡友芯集成电路设计有限公司,江苏无锡214122 [3]中国电子科技集团公司第五十八研究所,江苏无锡214035

出　　处：《微电子学》2008年第6期839-842,846,共5页Microelectronics

基　　金：科技部科技型中小企业技术创新基金(07C26223201317);教育部新世纪优秀人才支持计划(NCET-06-0484);江苏省自然科学基金资助项目(BK2007026)

摘　　要：提出一种基于匹配优化的温度补偿技术,使用新型BiCMOS低压共源共栅结构,实现一种实用的低温度系数高精度带隙基准源。采用HSpice和Cadence Spectre对电路进行模拟;在SMIC 0.35μm混合信号工艺条件下,蒙特卡罗和工艺角分析表明,匹配优化技术正确可行,在-40℃到80℃之间,温度系数为8.85 ppm/℃,对电源的灵敏度为0.516%。A temperature compensation method based on matching improvement was proposed, and a practical bandgap reference source with low temperature coefficient and high precision was implemented by using a new BiCMOS low-voltage cascode circuit structure. Based on SMIC＇s 0. 35μm mixed-signal technology, the circuit was simulated using HSpice and Cadence Spectre. Results from Monte Carlo simulation and process corner analysis showed that the matching improvement method was feasible. The circuit has a temperature coefficient of 8. 85 ppm/℃ in the temperature range from -40℃ to 80℃, and a power sensitivity of about 0. 516%.

关 键 词：带隙基准 匹配优化 BICMOS 温度补偿 

分 类 号：TN432[电子电信—微电子学与固体电子学]