全集成片上低温漂振荡电路  

A Fully Integrated On-chip Oscillator with Low Temperature Drift

作　　者：董方源[1,2] 杨海钢[1] 辛卫华[1] 刘珂[1,2] 

机构地区：[1]中国科学院电子学研究所,北京100190 [2]中国科学院研究生院,北京100039

出　　处：《微电子学》2008年第6期859-864,共6页Microelectronics

摘　　要：设计了一个全集成低温漂振荡电路,该电路通过将片上环形振荡器产生的振荡信号的频率转换为电压,并与片上基准电压源产生的基准电压进行比较,产生振荡器控制电压,实现稳定振荡器工作频率的目的。由于片上基准电压源和频率-电压转换电路具有较小的温度系数,振荡器的工作频率也具有较小的温度系数(140 ppm/℃)。该电路无需从片外接收任何基准信号。另外,该设计具有对振荡器工作频率的负反馈调整机制,与单独的振荡器相比,输出信号的频率更加稳定,在0～100℃范围内,输出信号频率的变化小于1.35%。The proposed design stabilizes the operating frequency of a fully integrated on-chip ring oscillator by converting its output frequency into a voltage, which was compared with a reference to generate a control voltage, which, in turn, adjusts the operating frequency of the oscillator. Since the on-chip voltage reference and the frequency-to-voltage converter can be designed to have a very low temperature coefficient, temperature drift of the oscillator＇s output frequency is very small （140 ppm/℃）. The on-chip oscillator, which requires no external reference signals, has a more stable output frequency and lower frequency variation （as low as 1.35% in the temperature range between 0℃ to 100 ℃）, compared with separate oscillators.

关 键 词：环形振荡器 低温漂 基准电压 

分 类 号：TN431[电子电信—微电子学与固体电子学]