基于Si-NPA的WO_3薄膜电容湿敏性能  

Capacitive humidity sensing properties of WO_3 thin film based on Si-NPA substrate

作　　者：董永芬[1] 李隆玉[1] 冯春岳[1] 姜卫粉[1] 李新建[1] 

机构地区：[1]郑州大学物理系材料物理教育部重点实验室,郑州450052

出　　处：《功能材料与器件学报》2008年第6期955-960,共6页Journal of Functional Materials and Devices

基　　金：国家自然科学基金资助项目(10574112)

摘　　要：采用匀胶旋涂技术将WO3溶胶沉积在硅纳米孔柱阵列(Si-NPA)衬底上,经500℃退火制得WO3/Si-NPA复合薄膜。场发射扫描电镜和X射线衍射的表面形貌和结构分析表明,WO3在Si-NPA表面形成连续薄膜,且复合薄膜保持了Si-NPA规则阵列结构的特点。湿敏测试结果显示:在11%到95%的相对湿度范围内,WO3/Si-NPA湿敏元件输出电容强,且随测试频率的增加而单调降低;随着WO3薄膜厚度的增加,湿敏元件灵敏度明显增大,但元件相应的响应/恢复时间却延长。WO3 thin film based on Si -NPA （WO3/Si- NPA） was prepared by sol -gel method and spin - coating technique. The characterization of surface morphology and structure by filed - emission scanning electron microscope and X - ray diffractometer indicated that the surface of Si - NPA was well covered by a continuous layer of WO3 thin film. By evaporating coplanar interdigital aluminum electrodes on WO3/Si - NPA, a capacitive humidity sensor was fabricated, and humidity properties of the sensors with different thickness of WO3 thin film were tested. It was shown that with the relative humidity （RH） changed from 11% to 95%, the capacitance of the sensor is very large and decreased with increasing testing frequency. The sensitivity of the device is strongly dependent on the thickness of WO3 thin film, which increased sharply with increasing the thickness of WO3 thin film, but the corresponding response time and recover time were prolonged.

关 键 词：硅纳米孔柱阵列(Si—NPA) WO3 电容型湿敏传感器 

分 类 号：TP212.2[自动化与计算机技术—检测技术与自动化装置]