电沉积ZnO纳米棒阵列膜制备及其透光性能研究  

Preparation and Optical Transmission of the ZnO Nanorod Array Films

作　　者：叶锋[1] 李晶晶[1] 王同涛[1] 王永亮[1] 刘芸[1] 王新东[1] 

机构地区：[1]北京科技大学冶金与生态工程学院物理化学系,北京100083

出　　处：《电化学》2008年第4期394-397,共4页Journal of Electrochemistry

基　　金：国家自然科学基金(50274010);国家863计划(2006AA03Z224)和(2007AA05Z150)资助

摘　　要：应用阴极恒电流电沉积法,以ZnC l2水溶液为电解液,在经预处理的ITO导电玻璃上制备ZnO纳米棒阵列,扫描电子显微镜(SEM)、X射线衍射(XRD)及透射光谱等测试表明,ZnO纳米棒阵列具有c轴高度择优取向,呈六方纤锌矿结构.当入射光波长大于380 nm时,ZnO纳米棒阵列的透光率大于95%,并且禁带宽度变窄.By using a galvaostatic electrodeposition method in the ZnCl2 solution, the highly oriented ZnO nanorod array films have been successfully prepared on ITO substrate after the pretreatment with ZnO nanoparticles. And they were characterized by scanning electron microscope, X-ray diffraction and transmittance spectra. The results indicated that the ZnO nanorod arrays grew along （001） direction with an orientation perpendicular to the substrate. When the wavelength of incident was over 380 nm, the ZnO nanorod arrays showed transmission of above 95%. Furthermore ,the band gap became narrower.

关 键 词：ZNO纳米棒阵列 电沉积 预处理 透光性 

分 类 号：TB383.1[一般工业技术—材料科学与工程]