L波段宽带低相噪VCO的设计与制作  

Design and Fabrication of Wide Band and Low Phase Noise L Band VCO

作　　者：陈君涛[1] 要志宏[1] 

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051

出　　处：《半导体技术》2008年第12期1130-1132,共3页Semiconductor Technology

摘　　要：提出了一种基于PCB工艺的L波段宽带低相噪VCO电路拓扑结构。采用基极和发射极双端调谐的方式,并引入可变电容反馈,实现了电路的超宽带。同时在低损耗的FR4基板上制作微带小电感以形成高Q谐振器,降低了VCO的相位噪声。基于此方法设计得到的L波段宽带VCO比同类薄膜工艺产品相位噪声低了5 dB以上。A structure of wide band and low noise L band VCO that based on PCB processing was proposed. Tune signal from both base and emitter port were employed, variable feedback capacitance was used to realized wide band of the circuit. Meanwhile, mini inductance was used on the low loss FR4 dielectric-slab to fabricate high Q resonator. In this way, the phase noise was reduced. The measurements show that the phase noise of the wide band VCO realized is 5 dB lower than the VCO based on thin-film processing.

关 键 词：压控振荡器 相位噪声 宽带 

分 类 号：TN838[电子电信—信息与通信工程]