温度控制装置中的InSb-In磁敏电阻  

InSb-In Magnetoresistive in Temperature Control Equipments

作　　者：刘冰[1] 黄钊洪[1] 孔令涛[1] 

机构地区：[1]华南师范大学信息光电子科技学院光子信息技术重点实验室,广州510006

出　　处：《微纳电子技术》2008年第12期734-737,共4页Micronanoelectronic Technology

摘　　要：研究了InSb-In共晶体薄膜磁敏电阻(MR)的温度特性,并把这种磁敏电阻应用到温度控制领域,设计了一种基于InSb-In磁敏电阻的温度控制器,由InSb-In磁敏电阻温度采集电路、信号处理电路和控制执行电路三部分组成。实验结果表明,InSb-In磁敏电阻材料同其他温敏元件材料一样,具有很好的温度特性,其温度特性与热敏电阻NTC极为相近;用InSb-In磁敏电阻材料制作的温控器具有灵敏度高、控温范围宽的优点,在低温区其灵敏度可以高于30mV/℃,常温下也可达到23mV/℃左右。同时它还具有稳定性强、可靠性好、受环境因素影响小、结构简单紧凑、价格低廉、对材料要求低等诸多优点,是一种值得推广应用的新型材料温度开关。The temperature characteristic of the InSb-In eutectic film magnetoresistor was researched. The magnetoresistor was used in the temperature control field and based on this material, a temperature controller was designed. The temperature controller includes a magneti- cresistor, a single processing circuit and a controlling and executive circuit, and has characteris- tics of a high sensitivity and a wide range of temperature control. The experience proves that InSb-In magnetoresistor has a good temperature characteristic and its sensitivity can reach more than 30 mV/℃ at the low temperature and about 23 mV/℃ at the normal temperature. Meanwhile, it also has many advantages, such as strong stability, good reliability, independence on environmental factors, simple and compact structure, low cost, low requirement for materials. It deserves being popularized as a bran-new temperature controller material.

关 键 词：InSb-In共晶体薄膜 磁敏电阻 温度特性 温控器 灵敏度 

分 类 号：TN304.23[电子电信—物理电子学] TM544[电气工程—电器]