Design and fabrication of miniature antenna based on silicon substrate for wireless communications  

Design and fabrication of miniature antenna based on silicon substrate for wireless communications

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作  者:GUO XingLong JIN Yan LIU Lei OUYANG WeiXia LAI ZongSheng 

机构地区:[1]Institute of Microelectronics Circuit & System, East China Normal University, Shanghai 200062, China

出  处:《Science in China(Series F)》2008年第5期586-591,共6页中国科学(F辑英文版)

基  金:the National Natural Science Foundation of China (Grants No. 60676047);Applied Materials-Shanghai Research and Development Fund (Grants No.06SA11)

摘  要:In this paper, a novel compact CPW-fed slot small antenna was designed and fabricated on high-resistivity silicon (HR-Si) by micro-electronics process. The results of simulation are consistent with results of measurement for the antenna. The mode of the antenna is vertical and horizontal bidirectional radiations. The gain of antenna is 2.5 dB, and the resonance frequency approximately is 3 GHz. This fabrication can be compatible with antenna integration and CMOS process. The parameters of this antenna are for reference radar antenna system of Unmanned Aerial Vehicles (UAV), satellite transmission, and communication.In this paper, a novel compact CPW-fed slot small antenna was designed and fabricated on high-resistivity silicon (HR-Si) by micro-electronics process. The results of simulation are consistent with results of measurement for the antenna. The mode of the antenna is vertical and horizontal bidirectional radiations. The gain of antenna is 2.5 dB, and the resonance frequency approximately is 3 GHz. This fabrication can be compatible with antenna integration and CMOS process. The parameters of this antenna are for reference radar antenna system of Unmanned Aerial Vehicles (UAV), satellite transmission, and communication.

关 键 词:miniature antenna high-resistivity silicon (HR-Si) IC process 

分 类 号:TN4[电子电信—微电子学与固体电子学] TN82

 

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