在金属基带上用激光脉冲沉积法制备帽子层CeO_2的研究  

Growth of CeO_2 cap layer for YBCO coated conductor on the metal substrate by PLD

作　　者：冯校亮 杨坚 张华 刘慧舟 周其 古宏伟 

机构地区：[1]北京有色金属总院超导材料研究中心,北京100088

出　　处：《低温与超导》2008年第12期19-22,共4页Cryogenics and Superconductivity

摘　　要：利用脉冲激光沉积法在带有Y2O3、YSZ隔离层的金属基带上制备了CeO2帽子层。主要讨论了温度、激光脉冲频率对CeO2隔离层的影响，用X射线θ～2θ扫描、Φ扫描对薄膜的取向和织构进行表征。结果表明在温度为610℃、激光频率为10Hz、1Pa氧压下制备的CeO2隔离层能有效地继承衬底的织构，平均平面内中扫描半高宽度为6．9°。扫描电镜可以观察到薄膜表面致密且无裂纹，原子力显微镜观测表面平均粗糙度在10nm以下。The CeO2 Cap Layer was deposited on the cube textured metallic Ni - W substrates, on which Y203 and YSZ buffer layers had been deposited, by Pulsed Laser Deposition （PLD）. X -ray θ～ 2θ scan, Φ -scan were used to observe the C - axis orientation and the in - plane alignment of the cap layer. It can be found that the CeO2 film has effectively inherited the texture of the substrate, the average in - plane Φ - scan Full Width High Maximum （FWHM） value is 6.9°. Even more, the result of Scanning Electron Microscopy （SEM） revealed a dense and crack - free CeO2 surface morphology, and the average range of the CeO2 surface was about 10nm observed by Atomic Force Microscopy （AFM）.

关 键 词：脉冲激光沉积(PLD) CEO2 YBCO 

分 类 号：TN304.9[电子电信—物理电子学] TM911.4[电气工程—电力电子与电力传动]