垂直腔半导体光开关中的动态响应时间  

Dynamical Response Time of Vertical Cavity Semiconductor Optical Switch

作　　者：王刚[1] 荣健[1] 杨华军[1] 刘普生[1] 

机构地区：[1]电子科技大学物理电子学院,四川成都610054

出　　处：《半导体光电》2008年第6期828-830,834,共4页Semiconductor Optoelectronics

基　　金：电子科技大学青年科技基金项目

摘　　要：从速率方程出发,研究了基于垂直腔结构的光开关(VCS)的动态响应特性。利用平均光子数的方法,在考虑了VCS有源区中增益与载流子浓度的对数关系以及长波长器件的俄歇复合效应后推导出了关于其动态开关延时的解析表达式,并基于该解析式分析了一些参数对VCS动态特性的影响。理论结果与文献报道的结论符合较好。Based on rate equations, the dynamical response characteristics of vertical cavity semiconductor optical switch（VCS） were investigated. By using the mean photon approach, the analytical expression of the dynamical response time of a VCS was derived after considering the logarithmic dependence of the gain on the carrier concentration in quantum well material and the Auger recombination effect in long wavelength semiconductor devices. Then the influences of some parameters on the dynamical characteristics of VCS were analyzed. The theoretical results exhibit agreement with the conclusions reported in previous literatures.

关 键 词：垂直腔半导体光放大器 光开关 速率方程 

分 类 号：TN248.4[电子电信—物理电子学]