掺杂超晶格量子阱作为光学双稳态器件的可能性  

Possibility of Doping Superlattice Quantum Well as Bistable State Cell

作　　者：胡西多[1] 罗诗裕[1] 邵明珠[1] 

机构地区：[1]东莞理工学院,广东东莞523106

出　　处：《半导体光电》2008年第6期835-838,共4页Semiconductor Optoelectronics

摘　　要：引入正弦平方势来描述掺杂超晶格由于交替掺杂引起的导带周期性调制,并提出了一种获得光学双稳态的新概念。指出了只须在超晶格量子阱的两端加上一个直流电场和交变电场,便可以用它作为光学双稳态器件。在经典力学框架内和小振幅近似下,考虑到运动阻尼和外场作用,粒子运动方程化为了具有硬弹簧特性的Duffing方程。用摄动法找到了系统的近似解,并分析了共振线附近粒子的运动行为与系统的稳定性。结果表明,粒子的振幅平方与外场振幅平方的关系曲线出现了后弯现象,正是这个后弯现象决定了系统存在双稳态,也正是这个双稳态效应决定了掺杂超晶格可望作为光子或光电子技术中新的记忆元件或存储元件。The sine-squared potential is introduced to describe the periodic modulation of the conductive band of the doping superlattice formed by the alternative doping. A new concept of obtaining the optic bistable state is proposed. It is indicated that the doping superlattice quantum well might be made as optic biastable state cell when a constant field and the alternating field are applied on its both sides. The particle motion equatioh is reduced to the Duffing equation with a hard-spring properties by using the small amplitude approximation in the classical mechanics frame. The approximation solution is found by perturbation method, and the dynamic stabilities are analysed. It shows that the back bend phenomenon exits in a2-f2 curve, it is the back bend that makes the bistable state exits in the systym. The new memory or storage cell might be made by using the bistable state effect of doping superlattice in the photo or photo-electric technology.

关 键 词：量子阱 光学双稳态 掺杂超晶格 DUFFING方程 

分 类 号：O471.5[理学—半导体物理]