高功率半导体激光器的m值与器件质量的相关性  

Relationship Between m and Quality of High Power Semiconductor Lasers

作　　者：梁庆成[1] 石家纬[1] 曹军胜[1] 刘奎学[1] 郭树旭[1] 李红岩[1] 胡贵军[1] 

机构地区：[1]吉林大学电子科学与工程学院集成光电子国家联合重点实验室,吉林长春130012

出　　处：《半导体光电》2008年第6期847-850,共4页Semiconductor Optoelectronics

基　　金：国家自然科学基金项目(60471009);吉林省重大工程项目(200403001-4);长春市科技局国际合作项目(06GH06)

摘　　要：用电导数技术测量了高功率半导体激光器及阵列激光器的m值,讨论了影响m值大小的因素及与器件质量的相关性。结果表明,m值是器件质量和可靠性的重要标志之一,对于同种器件,质量好的器件的m值一定在某范围之内。对取值范围进行了讨论。The values of rn of some laser diodes and laser diode arrays were measured with electronic derivative measurement. The relationship between m and the quality of device is discussed. The results show that the value of m is an important parameter in indicating the quality and reliability of device. For a certain kind of device, rn value of any one with a good quality certainly should be within some range and the range for different devices was discussed.

关 键 词：半导体激光器 理想因子m 质量 

分 类 号：TN248.4[电子电信—物理电子学]