采用正交实验优化单晶硅太阳电池表面织构化工艺  

Orthogonal experimental optimization of surface texturization of monocrystalline silicon for solar cell

作　　者：赵汝强[1] 江得福[1] 李军勇[1] 梁宗存[1] 沈辉[1] 

机构地区：[1]中山大学太阳能系统研究所,广东广州510006

出　　处：《材料研究与应用》2008年第4期441-446,共6页Materials Research and Application

基　　金：广东省科技计划项目(2007A10Y00002)

摘　　要：采用正交实验的方法对碱各向异性腐蚀制备单晶硅绒面进行了优化，制备的硅片样品绒面反射率为11．07％．在表面沉积减反射膜（ARC）后的平均反射率为2．56％。制绒液中NaOH的质量分数为1～3％时，制备的单晶硅绒面反射率较低．Na2SiO3的存在为反应提供了更多的起始点，所制作的绒面排列更为紧密．但Na2SiO3的浓度过高会阻碍反应进行，得不到理想的绒面．IPA可以加速反应产生的氢气泡从硅片表面逃逸，减弱NaOH的腐蚀强度，获得良好的各向异性因子．随着制绒反应时间延长，硅片表面的金字塔长大，反射率降低，这个过程是“金字塔”不断长大和被削平的过程．常温下难以制得绒面，要在减少醇挥发的情况下尽量提高反应温度．Anisotropic etching process of monocrystalline silicon in alkaline solution was optimized by orthogonal experiments,and the optimal reflectance of texturing＂pyramid＂was 11. 07%, after deposited antireflection coating （ARC）, the surface reflectance decreased to 2. 56%. The surface of monocrystalline silicon obtained by the 1% ～3% concentrations of NaOH in the solution got low reflectance, the＂pyramids＇are compacter by using Na2SiO3 in the solution because Na2 SiO3 can create more nuclear for reaction. IPA can weaken the etching rate of NaOH and obtain a good anisotropic factor by helping H2 to escape from the surface of silicon. The reflectance fluctuated as the etching time and size of ＂pyramid＂ changed, the pyramids expanded and were razed during this process. It＇s difficult to obtain＂pyramids＂ morphology in normal temperature. The reaction temperature should increase as much as it can at a low evaporation of ethanol condition.

关 键 词：单晶硅 表面织构化 正交实验 各向异性 

分 类 号：TM914.4[电气工程—电力电子与电力传动]