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机构地区:[1]西北工业大学,陕西西安710072
出 处:《稀有金属材料与工程》2008年第12期2139-2142,共4页Rare Metal Materials and Engineering
基 金:国家自然科学基金(50336040)
摘 要:常温下测量了Cd0.8Mn0.2Te晶片和多个掺In浓度不同的Cd0.8Mn0.2Te(以下简称Cd0.8Mn0.2Te:In)晶片的法拉第旋转谱和吸收边附近的透射光谱。结果表明,随着入射光子能量的增大,Cd0.8Mn0.2Te和Cd0.8Mn0.2Te:In的Verdet常数随之增大。掺In晶片的Verdet常数的变化与掺杂浓度有关:当光子能量在1.63~1.72eV范围内逐渐增加时,未掺In的测量值的变化范围是710~1820(°)/cm·T;当In浓度为8.96×10^16 atoms/cm^3时,Verdet常数增大到720-1960(°)/cm·T:当In浓度n分别为2.39×10^17,4.48×10^18 atoms/cm^3时,Verdet常数分别减小到660~1630,490-1090(°)/cm·T;当In浓度达到2.99×10^19 atoms/cm^3时,在1.63~1.70eV的光子能量范围内,Verdet常数减小到460~740(°)/cm·T。低掺In条件下,Verdet常数的增大是由于价带电子数增多,价带类P电子与Mn^2+离子3d电子交换相互作用增强引起的;在高掺In量下,由于导带类s电子与Mn^2+离子3d电子交换相互作用增强,导带能级分裂进一步减小,导致Cd0.8Mn0.2Te:In的Verdet常数减小。Faraday rotation and near infrared transmission properties of Cd0.8Mn0.2Te wafers and those with different In doping concentration in the range from 10^16 to 10^19 atoms/cm^3 were studied at room temperature. It was showed that with the increase of the photon energy, the Verdet constants of Cd0.8Mn0.2Te and Cd0.8Mn0.2Te:In were increased. Moreover, the Verdet constant of Cd0.8Mn0.2Te depended on In doping concentration. In the un-doped Cd0.8Mn0.2Te crystal, the Verdet constant was measured to be 710-1820(°)/cm·T in the photon energy range of 1.63-1.72 eV. When 8.96× 10^16atoms/cm^3 In was doped, the Verdet constant was increased to 720-1960(°)/cm·T However, the values was decreased to 660-1630, 490-1090(°)/cm·T when In doping concentration reached 2.39×10^17and 4.48×10^18atoms/cm^3 respectively. When 2.99× 10^19atoms/cm^3 In was doped, the Verdet constant was decreased to 460-740(°)/cm·T in the photon energy range of 1.63-1.70 eV. For low In concentration, the increase of the Verdet constant was a result of the increase of valence-band electrons, leading to an enhancement of exchange interaction between p-like valance-band electrons and 3d electrons of Mn^2+. On the contrary, for high In concentration, the effects of the exchange interaction between s-like conduction-band electrons and 3d electrons of Mn^2+ were enhanced, leading to the further decrease of the spin-split conduction-band and the decrease of the Verdet constant.
关 键 词:Cd0.8Mn0.2Te:In 法拉第旋转谱 Verdet常数 交换相互作用
分 类 号:TN304[电子电信—物理电子学]
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