高重复率下硅酸镓镧电光晶体压电特性有限元分析  

Finite element analysis of piezoelectric property of langasite optical crystal for high repetition rate

作　　者：李远[1] 闫新琦[1] 孙年春[1] 

机构地区：[1]四川大学电子信息学院,成都610064

出　　处：《激光杂志》2008年第5期20-21,共2页Laser Journal

摘　　要：介绍了在高重复率高电压的载荷下,以硅酸镓镧为例的电光晶体的压电特性。建立了电光晶体的有限元模型,并基于有限元数值方法,模拟分析了在固定和自由边界条件下硅酸镓镧晶体由逆压电效应产生的应变及应力。结果表明:自由边界条件下的晶体形变是呈线性变化的;固定边界条件下晶体有明显的位移变化,且其形变相对于晶体中心处呈对称分布,由于加在晶体的电压数值分布不同,晶体周围区域比中心区域的形变更为严重。晶体在自由边界条件下产生的应力远远小于固定边界条件下产生的应力。The piezoelectric property of langasite optical crystal is introduced under the load of high repetition rate and high voltage.Finite element model is based,and the strain and stress of crystal caused by reverse piezoelectric effect are analyzed respectively by using finite element methods on the condition of fixed boundary and free boundary.The results indicate that the crystal strain is linear movement when boundary is free,and the crystal strain which changed evidently is symmetry relatively to the center of crystal when boundary is fixed. The strain of ambient area of crystal is more setrious than that of the （：enter of crystal. The stress under free boundary can be ignored, which quitely less than the stress under fixed boundary.

关 键 词：高重复率 压电特性 应变 应力 有限元法 

分 类 号：TN248.1[电子电信—物理电子学]