H表达的ECLD双稳环环宽的研究  

Title study on the ECLD hysteresis loop width of H expression

作　　者：黄立平[1] 潘炜[2] 

机构地区：[1]青海民族学院电子工程与信息科学系,青海西宁810007 [2]西南交通大学信息科学与技术学院,四川成都610031

出　　处：《激光杂志》2008年第5期26-28,共3页Laser Journal

基　　金：国家自然科学基金资助项目(No.10174057,No.90201011);教育部科学技术研究重点项目(No.105148);高等学校博士学科点专项科研基金(No.20070613058)

摘　　要：采用H参量简化模型研究光栅调谐外腔半导体激光器的双稳特性,导出以H参量表达的双稳环环宽解析式,给出了其适用范围,得到剩余反射率减小时导致双稳环消失的临界值,然后数值模拟了光栅反射率、谱线展宽因子、H参量、剩余反射率对载流子密度与频率关系曲线的影响,从中发现了剩余反射率增大时也存在双稳环环宽为零的情况,数值计算了剩余反射率极限值,并指出了环宽极大值的位置。By applying the H parameter simplified model to study the bistable characteristics of ECLD,an analytical expression for the hysteresis loop width has been derived and its applicable range reported.The threshold of hysteresis loop disappearance has also been derived.The effect of grating reflectivity and linewidth enhancement factor and H parameter and residual reflectivity on the relation between carrier density and frequency has been imitated by calculating. The phenomenon of zero hysteresis loop width existing in increasing residual reflectivity has been discovered, and the ultimate residual retlectivity and the maximum of loop width has heen calculated.

关 键 词：激光技术 光栅调谐外腔半导体激光器 双稳环 H参量 剩余反射率 

分 类 号：TN248[电子电信—物理电子学]