高纯氧化钨中微量杂质的ICP-MS法测定  

DETERMINATION OF MICRO-AMOUNT OF IMPURITIES IN TUNGSTEN OXIDE BY INDUCTIVELY COUPLED PLASMA-MASS SPECTROMETRY

作　　者：邓必阳[1] 张展霞[1] 杨秀环[1] 朱炳泉[2] 刘海臣[2] 

机构地区：[1]中山大学化学系,广州510275 [2]中科院广州地球化学研究所

出　　处：《理化检验（化学分册）》1998年第1期7-8,17,共3页Physical Testing and Chemical Analysis(Part B:Chemical Analysis)

基　　金：国家工商局资助

摘　　要：报道了高纯氧化钨中铅、铋、镍、锰等微量杂质的电感耦合等离子体质谱测定方法。选择了仪器最佳操作参数,考察了质谱干扰和基体效应,选用标准加人法可克服基体效应。方法不经分离富集,各元素测量值与标准值相吻合,相对误差小于5％,方法快速、准确。A method for the determination of Bi、Pb、Ni、Mn in high purity tungsten oxide by inductively coupled plasma-mass spectrometry (ICP-MS) was developed. The operating parameters for instrument were studied in detail. The matrix effect was overcome by the standard addition method. The relative errors are below 5%. The results obtained for Pb、Bi、Ni、Mn are a-greed well with standard values. The method is rapid and accurate.

关 键 词：高纯氧化钨 铅 铋 镍 锰 氧化钨 ICP-MS 

分 类 号：TQ136.13[化学工程—无机化工]