S／X双波段双极化共口径天线阵的设计  

Design of S/X Dual-Band Dual-Polarized Shared-Aperture Microstrip Antenna Array

作　　者：陈旷达[1] 钟顺时[1] 延晓荣[1,2] 

机构地区：[1]上海大学通信与信息工程学院,上海200072 [2]中国海洋大学信息科学与工程学院,青岛266071

出　　处：《微波学报》2008年第6期65-67,共3页Journal of Microwaves

基　　金：教育部高等学校博士学科点专项科研基金(20050280016);国家863计划(2007AA12Z125)

摘　　要：提出一种S/X双波段双极化共口径天线阵的新设计,以紧凑的三层结构实现了1∶3的频率比。X波段采用双层贴片,并在下层贴片上开缝以提高其极化端口间的隔离度。S波段采用缝隙,刻蚀在X波段贴片的地板上,从而减少了阵列层数,简化了天线结构。仿真结果验证了本设计的有效性。X波段的相对阻抗带宽(S11≤-10dB)达15.5%(中心频率为9.6GHz),频带内隔离度大于25dB的带宽为1.2GHz,隔离度最大值达40dB。S波段为单层结构,相对阻抗带宽为5.5%(中心频率为3.3GHz)。频带内隔离度优于27dB。试验阵列双波段交叉极化电平均低于-30dB。A novel design of the S/X dual-band dual-polarized （DBDP） shared-aperture microstrip antenna array with a frequency ratio of 1 ： 3 is proposed, which is realized through a compact three-layer topology. Stacked patches with slits on the lower patches are used for X band to achieve high isolation between the dual polarized ports. By etching the S-band slots on the same ground plane with the X-band patches, the total number of array layers is reduced, which leads to a streamlined geometry. The simulated results validate the design and show that the impedance bandwidth （S11 ≤ - 10dB） is 15.5% for X band within which the isolation is higher than 25dB for a bandwidth of 1.2GHz, with the maximum of 40dB. The single-layer S-band slot achieves an impedance bandwidth of 5.5% with isolation higher than 27dB within the operating bandwidth. The cross-polarization levels of the test array are lower than - 30dB for both bands.

关 键 词：微带天线阵 双波段 双极化 合成孔径雷达 

分 类 号：TN822[电子电信—信息与通信工程]