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作 者:谭全林[1] 陈迅[1] 邢座程[1] 李少青[1]
机构地区:[1]国防科技大学计算机学院,湖南长沙410073
出 处:《微电子学与计算机》2009年第1期42-44,47,共4页Microelectronics & Computer
摘 要:为了加快处理器对数据的存取速度,采用0.13μm、8层(Al)金属布线N阱COMS工艺设计实现了一款290ps读访问延迟、16字11位、4读1写的特殊寄存器文件.它应用在流处理器中,读操作是用差分灵敏放大器实现,和写操作共用一个时钟周期,当读写地址一致时,数据从旁路输出.本寄存器文件在频率为1GHz,1.2V,50℃的典型情况下经过多个周期的测试都可以准确地工作,平均功耗为14.75mW,达到了高速低功耗的设计目标.In order to speed up the processor's speed of data visit,a 290 ps read-access latency, 16 word 11 bit, 4 readport, 1 write port special register file has been designed and implemented in 0.13-um charmel length, eight-metal-layer (Al) ,N WELL CMOS process. It has been used in stream processor. Read operation is accomplished by sensing amplifier. Read operation is followed by write operation in the same cycle. Whenever a read address is identical to a write address, the write data is output bypass. The register file has been tested cycle by cycle and can correctly work in the typical environment (1.2V, 50℃ ) at 1GHz, the average power is 14.75 mW , which has achieved the goal of higher speed and lower power.
分 类 号:TN4[电子电信—微电子学与固体电子学]
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