基于InP高Q值微碟谐振腔原理分析及应用  

Analysis theory of a high Q microdisk based on material of InP and its application

作　　者：蒋烽[1] 周剑英[1] 杨建义[1] 江晓清[1] 王明华[1] 

机构地区：[1]浙江大学信息与电子工程学系,浙江杭州310027

出　　处：《光学仪器》2008年第6期27-31,共5页Optical Instruments

基　　金：国家自然科学基金资助项目(60676028)

摘　　要：对微谐振腔Q值相关机理进行模型分析,提出利用定向耦合原理对微谐振腔和总线波导之间的耦合分析。利用微碟谐振腔的高Q值理论对基于InP半导体材料的光开关设计并进行性能分析,设计的微碟光开关自由频谱范围(FSR)为3.4nm,光开关消光比可达20dB左右。此外负耦合(negative gap)结构使微碟与总线波导耦合的效率明显提高。We analyze some models about microresonator＇s high Q theory. Directional couple theory is proposed to solve coupling relationship between microresonator and bus waveguide. A novel microdisk optical switch based on InP material is designed, using the microdisk＇s high Q theory, then the switch＇s characteristics is analyzed. The free spectral range （FSR） is 3.4nm, the extinction ratio will achieve about 20dB. What＇s more, the negative gap structure prominently improve coupling between the microdisk resonator and bus waveguide.

关 键 词：微碟谐振腔 高Q值 负耦合 消光比 

分 类 号：TN256[电子电信—物理电子学]