Structure and optical characterization of GaP-SiO_2 co-sputtered films  

Structure and optical characterization of GaP-SiO_2 co-sputtered films

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作  者:CHAI Yuesheng YANG Meihui ZHANG Mingang SUN Gang 

机构地区:[1]School of Materials Science and Engineering, Shanghai University, Shanghai 200072, China [2]School of Materzals Sctence and Engineermg, Taiyuan University of Science and Technology, Taiyuan 030024, China

出  处:《Rare Metals》2008年第6期580-585,共6页稀有金属(英文版)

基  金:financially supported by the University Students’ Innovation and Start-ups Special Project of Tai-yuan Science and Technology Board (No. 07010759);the Natural Science Foundation of Shanxi Province, China (No. 20041073)

摘  要:The films of GaP nanocrystals embedded in SiO2 matrix were prepared by radio frequency magnetron co-sputtering and subsequent annealing technology. The structure and morphology of the films were investigated by scanning electron microscope, X-ray diffraction, and energy dispersive spectrum. Raman spectra results showed that the transverse optical phonon model (TO) and the longitudinal optical phonon model (LO) of GaP nanocrystals were both discovered to undergo red shift, broadening, and asymmetry. The red shift degree of the TO model was about 8.8 cm^-1. The luminescence spectrum of the GaP/SiO2 film consisted of several emission peaks. 2.84-2.54 eV blue light emission was explained by the quantum confinement-luminescence centers model (QC-LCs).The films of GaP nanocrystals embedded in SiO2 matrix were prepared by radio frequency magnetron co-sputtering and subsequent annealing technology. The structure and morphology of the films were investigated by scanning electron microscope, X-ray diffraction, and energy dispersive spectrum. Raman spectra results showed that the transverse optical phonon model (TO) and the longitudinal optical phonon model (LO) of GaP nanocrystals were both discovered to undergo red shift, broadening, and asymmetry. The red shift degree of the TO model was about 8.8 cm^-1. The luminescence spectrum of the GaP/SiO2 film consisted of several emission peaks. 2.84-2.54 eV blue light emission was explained by the quantum confinement-luminescence centers model (QC-LCs).

关 键 词:semiconductor materials nanocrystal-embedded film PHOTOLUMINESCENCE radio frequency magnetron co-sputtering 

分 类 号:O64[理学—物理化学]

 

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