氧化钒非制冷红外焦平面探测器芯片工艺研究  

Research on Fabrication of VO_x UFPA Detectors

作　　者：袁俊[1] 太云见[1] 雷晓虹[1] 何雯瑾[1] 陈妞[1] 

机构地区：[1]昆明物理研究所云南,昆明650223

出　　处：《红外技术》2009年第1期1-4,共4页Infrared Technology

摘　　要：非制冷红外探测器具有成本低廉、无需制冷等优异特点,在红外探测和红外成像领域占有极其重要的地位。从氧化钒非制冷焦平面探测器的牺牲层、支撑层、氧化钒等制备工艺进行了研究,为国内非制冷焦平面探测器工程化研究奠定了坚实的技术基础。High performance and inexpensive VOx infrared detectors play an important role in the field of thermal detection and imaging of objects, because of the advantages of high sensitivity at long-wavelength and room-temperature operation without cooling system. This paper focused on fabrication of sacrificial layers, supporting layers, vanadium oxides film, and so on, which is technology foundation for domestic uncooled infrared focal plane array.

关 键 词：非制冷 红外焦平面 氧化钒 工艺 

分 类 号：TN215[电子电信—物理电子学]