分子束外延生长Hg1-_xCd_xTe材料原位退火研究  

A Study of In Situ Annealing of MBE Growth Hg1-_xCd_xTe

作　　者：苏栓[1] 李艳辉[1] 周旭昌[1] 杨春章[1] 谭英[1] 高丽华[1] 李全保[1] 

机构地区：[1]昆明物理研究所,云南昆明650223

出　　处：《红外技术》2009年第1期5-7,共3页Infrared Technology

基　　金：国家自然科学基金资助项目(60576069);装备预先研究资助项目

摘　　要：对分子束外延(MBE)生长了Hg1-xCdxTe薄膜材料进行原位退火研究。显微镜观察可知,原位退火可以得到光滑的材料表面,并可以降低材料的腐蚀坑密度(EPD)。霍尔测试结果表明,通过调整退火温度和汞束流可以明显地改善Hg1-xCdxTe材料的电学性能。研究表明Hg1-xCdxTe材料的原位退火技术在改善材料的微观结构和电学性能方面有着重要的意义。An approach of MBE in-situ annealing of Hg1-xCdxTe has been studied. Microscope images showed that the surface of in-situ annealed Hg1-xCdxTe epilayers by using molecular beam epitaxy were mirror like and the Erosion Pit Density（EPD）was greatly reduced by in-situ annealing. Hall-effect measurements showed that the electrical properties is improved by changing the annealed temperature and the Hg flux. These results indicate that the microstructure and the electrical properties of Hg1-xCdxTe epilayer can be significantly affected by the in-situ annealing conditions.

关 键 词：分子束外延(MBE) 原位退火 HG1-XCDXTE 汞束流 电学性能 

分 类 号：TN215[电子电信—物理电子学]