半导体Ⅱ-类量子阱中法诺态的结构和自发辐射对无粒子数反转光增益过程的作用  

Effects of Structure of Fano States and Spontaneous Emission on Optical Gain Without Inversion in Type II Semiconductor Quantum Wells

作　　者：郭长志[1,2] 陈水莲[1,2] 郭九苓 王舒民[1,2] 

机构地区：[1]北京大学物理系 [2]清华大学应用数学系

出　　处：《Journal of Semiconductors》1998年第2期81-91,共11页半导体学报（英文版）

基　　金：国家自然科学基金

摘　　要：从全量子理论出发，进一步系统深入地分析了在Ⅱ－类半导体量子阱中实现无反转增益过程的物理机制，量子阱层导带Γ－能谷和势垒层导带Χ－能谷混合形成的量子相干法诺态的能谱结构，及其对光吸收几率的法诺量子干涉效应，首次探讨了法诺态的能谱结构和真空场量子起伏引起的自发辐射对受激光增益过程的影响。Abstract The physical mechanism realizing optical gain without population inversion, inclu ding the structure of Fano states composed by configuration interaction between the electron Γ valley in well layer and the Χ valley in barrier layer, their quantum interference effect and the spontaneous emission by quantum fluctuation of vacuum field on the optical transition pro babilities in a type II semiconductor quantum well are systematically analyzed by a full quantum mechanical theory, in order to provide a theoretical guide for utilizing this mechanism to develop a type II semiconductor quantum well laser without population inversion operating in even lower lasing threshold.

关 键 词：半导体量子阱 无反转增益 法诺态 激光器 

分 类 号：TN301[电子电信—物理电子学] TN248.4