DBD-PECVD法制备高疏水性氟碳聚合物(a-C:F)薄膜的研究  

Study on the Hydrophobic Fluorinated Amorphous Carbon(a-C:F) Film Deposited by DBD-PECVD

作　　者：尹晔珺[1,2] 李东明[1] 刘东平[2] 谷建东[1,2] 牛金海[2] 冯志庆[2] 

机构地区：[1]大连交通大学机械工程学院,辽宁大连116028 [2]大连民族学院光电子技术研究所,辽宁大连116605

出　　处：《大连民族学院学报》2009年第1期45-50,共6页Journal of Dalian Nationalities University

基　　金：国家自然科学基金资助项目(10405005)

摘　　要：以C4F8为放电气体,利用介质阻挡放电化学气相沉积(DBD-PECVD)法制备了氟碳聚合物(a-C:F)薄膜。使用FTIR、AFM、接触角测量仪、台阶仪对a-C:F薄膜进行了表征,研究了放电压力及沉积时间对a-C:F薄膜的沉积速率、均方根表面粗糙度(RMS)和a-C:F薄膜疏水性的影响。实验结果表明,薄膜的沉积速率随放电压力的升高而增大,最大值为193 nm.min-1;当放电压力较低时,薄膜的RMS值小于1.0 nm;放电压力较高时,薄膜的RMS值大于100 nm。无论是改变放电压力还是沉积时间,a-C:F薄膜均表现出很强的疏水特性,最大接触角(以普通滤纸为基底)可达137°。a-C:F薄膜的表面粗糙度是影响a-C:F薄膜疏水性的重要因素。Fluorocarbon films were prepared by DBD -PECVD with C4 F8 as discharging gas, which were characterized by Fourier transform infrared spectroscopy （FTIR） , atomic force microscopy （AFM） , contact angle measurements and profilometry. The effects of discharge pressure and deposition time on the film properties, such as deposition rates, RMS surface roughness, and a- C：F film hydrophobicity have been investigated. Results show that film deposition rate increases with increasing deposition pressure, with a maximum value of 193 nm.min^-1 At lower deposition pressure, RMS value is below 1.0nm, at higher pressure, RMS valure will exceed 100 nm. All deposited fluorocarbon films show the hydrophobic surface properties, with a contact angle up to 137°. The surface roughness of a - C ： F film will effect its hydrophobic properties in a remarkable extent.

关 键 词：DBD--PECVD a—C:F C4F8 接触角 疏水特性 

分 类 号：O484.1[理学—固体物理]