多层片式ZnO压敏电阻器  

MultilayerChip ZnO Varistors

作　　者：何晓明[1] 陈大任[1] 李国荣[1] 张望重[1] 刘胜利[1] 

机构地区：[1]中国科学院上海硅酸盐研究所

出　　处：《功能材料》1998年第2期196-197,211,共3页Journal of Functional Materials

摘　　要：用流延工艺制备了ＺｎＯＢｉ２Ｏ３系统的多层独石式片状结构的ＺｎＯ压敏电阻器，测量了元件的电学性能，结果表明：用常规ＺｎＯ瓷料，选用合适的厚膜制备工艺和内电极材料能得到性能良好的低压ＺｎＯ压敏电阻器。Multilayerchip ZnO varistors of the ZnOBi_2O_3Sb_2O_3 system were prepared by tape casting technology. The electrical properties were measured. The results showed that low-voltage ZnO Varistors with excellent properties could be prepared by using conventional ZnO ceramic composition, compatible inner electrode material and thick film fabrication technique.

关 键 词：压敏电阻器 多层片式结构 气化锌 

分 类 号：TN384[电子电信—物理电子学]