Mn掺杂ZnO稀磁半导体的化学合成及磁性研究  

Magnetic Properties Study on Mn Doped ZnO Synthesized by Chemical Method

作　　者：程兴旺[1] 李祥[1] 于宙[1] 龙雪[1] 

机构地区：[1]北京理工大学材料科学与工程学院,北京100081

出　　处：《材料工程》2009年第1期70-73,共4页Journal of Materials Engineering

摘　　要：采用化学方法制备了名义组分为Zn0.993Mn0.007O的Mn掺杂ZnO稀磁半导体材料,并研究了退火温度(Ts=400,600,800℃)对其结构和磁性的影响。结果表明:在退火温度低于600℃条件下,合成的样品为单一纤锌矿结构的ZnO颗粒材料;当退火温度为800℃时,合成的样品中除了纤锌矿结构ZnO外还观察到ZnMnO3第二相的存在。磁性研究表明:经过600℃退火后的样品,其室温铁磁性最强,而经过800℃退火后的样品,其铁磁性几乎消失,并表现为增强的顺磁性。结合对样品的Raman光谱和紫外-可见吸收光谱的分析,表明Mn元素进入了ZnO晶格中并替代了ZnO中的Zn离子。样品的室温铁磁性是源于(Zn,Mn)O的本征特性,并排除了样品中第二相导致其具有室温铁磁性的可能性。Mn doped ZnO Dilution Magnetic Semiconductors （DMSs） samples with nominal composition Zn0.99aMn0.007O were fabricated by chemical method. The structural and magnetic properties as well as optical properties of the synthesized samples were studied. The results indicated that samples sintered at temperatures below 600℃ showed a single wurtzite ZnO structure with prominent ferromagnetism at room temperature, while sample sintered at 800℃ a second phase, namely, ZnMnO3 observed with significant reduced ferromagnetism and an enhancement of paramagnetism. Structural and optical properties study demonstrated that the ferromagnetism observed in the studied samples was originated from the doping of Mn in the lattice of ZnO crystalline, which confirmed intrinsic room temperature ferromagnetism in （ZnMn）O crystal.

关 键 词：ZNO 掺杂 稀磁 

分 类 号：TN201[电子电信—物理电子学]