低温热氧化处理温度与时间对氧化钒薄膜性能的影响  

The effects of thermal oxidation temperature and time on VO_x thin films under low temperature

作　　者：梁继然[1] 胡明[1] 刘志刚[1] 

机构地区：[1]天津大学电子信息工程学院电子科学与技术系,天津300072

出　　处：《功能材料》2009年第1期43-47,共5页Journal of Functional Materials

基　　金：天津市自然科学基金面上资助项目(043600811);天津市应用基础及前沿技术研究计划重点资助项目(08JCZDJC17500)

摘　　要：采用直流对靶磁控溅射氧化钒薄膜再附加热氧化处理的方式进行金属－半导体相变特性氧化钒薄膜的制备，研究了低热处理温度下热处理温度与时间对氧化钒薄膜组分、晶体结构和相变性能的影响。新制备的氧化钒薄膜为V2O3和VO的混合相。经300℃／1h热处理后，薄膜内出现单斜结构VO2，薄膜具有相变特性；保持热处理时间不变，升高热处理温度至360℃，薄膜表面变得致密，致密的薄膜表面阻碍了氧气与薄膜内部V2O3和VO的反应，VO2成分含量与300℃／1h处理时的含量接近；增加热处理温度并延长热处理时间，如热处理条件为320℃／3h时，薄膜内VO2成分大量增多，电阻值变化幅度超过两个数量级；在300～360℃的热处理温度区间内，薄膜内V2O3和VO不断向VO2转变，相变性能变好，但对VO2的单斜金红石结构没有影响。The vanadium oxides thin films were prepared by reactive magnetron sputtering method and subsequent thermal oxidation annealing. The effects of thermal oxidation temperature and time on the compositions, crystalline and phase transitions properties of the thin films were discussed. The compositions of the as-deposited vanadium oxides thin films were the mixture of V2O3 and VO. The V2O3 and VO were oxidated to monoclinie structure VO2 partly after annealed at 300℃ for lh and the thin film has metal-semiconductor properties. When increasing the thermal oxidation temperature to 360℃, the surface of thin films become compact. The compact surface lowers the interface area between V2O3, VO and O2, and the proportion of VO2 in thin films surface doesn＇t change obviously. The proportion of VO2 in thin films increases as increasing thermal annealing temperature and time to 320℃ and 3h. The phase transition decade beyonds two. The composition of the thin films changes from V2O3 and VO to VO2 gradually as the thermal annealing condition increasing between 300 and 360℃ ,but the monoclinie structure of the films is unchanged.

关 键 词：相变氧化钒薄膜 低温热处理 直流对靶磁控溅射 

分 类 号：TG146.4[一般工业技术—材料科学与工程]