半导体纳米材料作为表面增强拉曼散射基底的研究进展  

Advances in Surface-enhanced Raman Scattering——Semiconductor Substrates

作　　者：赵冰[1] 徐蔚青[1] 阮伟东[1] 韩晓霞[1] 

机构地区：[1]吉林大学超分子结构与材料国家重点实验室,长春130012

出　　处：《高等学校化学学报》2008年第12期2591-2596,共6页Chemical Journal of Chinese Universities

基　　金：国家自然科学基金(批准号:20573041;20773044;20873050);教育部长江学者和创新团队发展计划(批准号:IRT0422);教育部新世纪优秀人才支持计划;教育部引智计划(批准号:B06009)资助

摘　　要：在总结半导体纳米材料作为表面增强拉曼散射(SERS)基底的一些相关研究工作的基础上,讨论了半导体纳米粒子SERS基底的增强效应与纳米材料的种类、尺寸的相关性;对半峰宽、激发波长进行了分析,并对半导体纳米材料作为SERS基底时,化学增强、电磁增强、纳米半导体缺陷和激子波尔半径的影响等进行了阐述.The advances of surface-enhanced Raman scattering（SERS）on semiconductor substrates,which is also the major research of our group in the past three years,are summarized in this paper.The application of semiductor nanoparticles explored the scope of SERS substrates.Some possible mechanisms different from noble metal substrates were discussed.The major contribution of semiconductor substrates for SERS maybe charge-transfer.Some phenomena,such as nanoparticle size dependence,half-width decrease of spectra,exciting line dependence,were discussed.The possible reasons of chemical enhancement,electromagnetic enhancement,surface defects of semiconductor,exciton Bohr radius were analysed.

关 键 词：表面增强拉曼散射 半导体 基底 

分 类 号：O657[理学—分析化学]